Design rules

No. Description pharosc sxlib scmos-DEEP scmos Generic 0.13µm
vsc vx

4.1a

Implant - channel space

 5

 5

 5

 3

 3

0.28

4.1b

Implant overlap of channel

 5

 5

 5

 3

 3

0.28

4.2a

Implant overlap of ndif or pdif

 3

 3

 4

 2

 2

0.18

4.2b

Implant overlap of ntie or ptie

 1

 1

 1

 2

 2

0.04

4.4

Implant width

 4

 4

 4

 4

 2

0.24

4.5a

nimp - nimp, pimp - pimp space

 4

 4

 4

 4

 2

0.24

4.5b

nimp - pimp space (overlap not allowed)

 0

 0

 0

 0

 0

0.0 

4.6

Implant overlap of poly

 4

 4

 -

 -

 -

0.24

Notes.

  1. SN, nimp and N-select are terms for N-implant; SP, pimp and P-select for P-implant; PD is diffusion covered by P-implant in NWELL; PS by P-implant in PWELL; ND by N-implant in PWELL and NS by N-implant in NWELL. PO is poly.
  2. Implant rules can be complex. Normally implant is drawn from the well layer and cut out for the opposite implant around well/substrate contacts.
  3. Butted contacts, where N and P implants divide a single diffusion geometry into separate N and P-diffusion areas can lead to complicated rules and may not be allowed by all foundries. They are not included here.
  4. DSM processes require poly to be covered by implant (rule 4.6).

implant layout rules
IMPLANT layout design rules