Design rules

No. Description pharosc sxlib scmos-DEEP scmos Generic 0.13µm
vsc vx

2.1a

ndif, pdif width

 4

 4

 4

 3

 3

0.20

2.1b

ntie, ptie width

 6

 6

 4

 3

 3

0.20

2.2a

ndif - ndif, pdif - pdif space

 4

 6

 6

 3

 3

0.20

2.2b

ntie - ntie, ptie - ptie space

 6

 6

 6

 3

 3

0.20

2.3a

nwell - ndif space
pwell overlap of ndif

 6

 9

 9

 6

 5

0.32

2.3b

pwell - pdif space
nwell overlap of pdif

 6

 7

 7

 6

 5

0.32

2.4a

nwell - ptie space
pwell overlap of ptie

 5

 9

 9

 3

 3

0.24

2.4b

pwell - ntie space
nwell overlap of ntie

 5

 7

 7

 3

 3

0.24

2.5

ndif - ptie, pdif - ntie space

 4

 6

 6

 4

 4

0.20

2.8a

pdif - ndif space

12

16

16

12

10

0.64

2.8b

pdif - ptie, ndif - ntie space

11

16

16

 9

 8

0.56

2.8c

ntie - ptie space

10

16

16

 6

 6

0.48

Notes.

  1. PD or pdif is P-diffusion in NWELL, used for transistor source/drain regions. PS or ptie is P-diffusion in PWELL used for well contacts, Similarly for ND, ndif, NS and ntie.

diffusion layout rules
DIFFUSION layout design rules