no2 standard cell family

 2-I/P NOR gate
no2 symbol
The no2_x1 is a single stage 2-NOR with P/N ratio of 2.1. The no2_x4 is a 3 stage 2-NOR with stage efforts of about 0.9 and 3.9.
nq:(i0+i1)' cell width power Generic 0.13um typical timing (ps & ps/fF), pin i1.
leakage dynamic tR=PropR+RampR×Load(fF), tF=PropF+RampF×Load(fF)
sxlib013 gates lambda 0.13um nW nW/MHz PinCap PropR RampR PropF RampF
no2_x1 1.3  40 2.20  0.69  10.2  5.3f  45  2.92  45  2.33
no2_x4 2.3  70 3.85 2.43  57.2  5.8f 139  0.74 146  0.57
no2_x1
 
Effort
FO4 Log.
i0 /\ 1.60 1.68
¯_
i1 /\ 1.44 1.62
¯_
no2_x1 schematic no2_x1 standard cell layout
no2_x4
 
Effort
FO4 Log.
i0 /\ 2.45 0.46
¯_
i1 /\ 2.27 0.45
¯_
no2_x4 schematic no2_x4 standard cell layout
Web data book for the sxlib. Vdd=1.2V, T=27°C, nominal process, generic 0.13um technology.   Copyright © 2005-2008 Graham Petley.  11 JAN 2008