a4 standard cell family
4-I/P AND gate
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4 I/P AND gate designed with a stage effort of about 2.4 for the a4_x2 and about 4.8 for the a4_x4.
q:(i0*i1*i2*i3)
cell width
power
Generic 0.13um typical timing (ps & ps/fF), pin
i3
.
leakage
dynamic
tR=PropR+RampR×Load(fF), tF=PropF+RampF×Load(fF)
ssxlib013
gates
lambda
0.13um
nW
nW/MHz
PinCap
PropR
RampR
PropF
RampF
a4_x2
2.3
70
3.85
1.85
32.6
4.7f
112
1.57
110
1.21
a4_x4
2.7
80
4.40
2.54
48.3
4.5f
138
0.79
134
0.61
a4_x2
Effort
FO4
Log.
i0
/\
¯_
2.22
i1
/\
¯_
2.17
i2
/\
¯_
2.07
i3
/\
¯_
1.97
a4_x4
Effort
FO4
Log.
i0
/\
¯_
2.38
i1
/\
¯_
2.32
i2
/\
¯_
2.25
i3
/\
¯_
2.13
Web data book for the ssxlib. V
dd
=1.2V, T=27°C, nominal process, generic 0.13um technology. Copyright © 2005-2008 Graham Petley. 11 JAN 2008